| PART |
Description |
Maker |
| WEDPN16M64VR-125BC WEDPN16M64VR-100BM WEDPN16M64VR |
125MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
100MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
133MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
|
White Electronic Designs
|
| V54C3128804VAT8 V54C3128804VAT7 |
HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8
|
Mosel Vitelic, Corp.
|
| EL2250C EL2250CN EL2250CS EL2250CS-T13 EL2250CS-T7 |
125MHz Single Supply Dual/Quad Op Amps
|
Elantec Semiconductor
|
| HA5025EVAL HA5013 HA5013IB HA5013IP FN3654 |
Op Amp, Triple 125MHz, Video, Current Feedback
From old datasheet system
Triple 125MHz Video Amplifier
Triple, 125MHz Video Amplifier
Triple/ 125MHz Video Amplifier
|
INTERSIL[Intersil Corporation]
|
| EL2250 |
(EL2250 / EL2450) 125MHz Single Supply Dual/Quad Op Amps
|
Intersil Corporation
|
| EL2150CN EL2157C |
125 MHz Single Supply/ Clamping Op Amps
125 MHz Single Supply, Clamping Op Amp(125MHz 单电源钳位运算放大器)
|
Elantec
|
| KMM366F1600BK3 KMM366F1680BK3 |
16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MX25L1602 MX25L1602MC-50 |
16M-BIT [16M x 1] CMOS SERIAL FLASH EEPROM
|
Macronix International
|
| MX29LV160DTGBI-70G MX29LV160DBGBI-70G MX29LV160DBT |
Byte/Word mode switchable - 2,097,152 x8 / 1,048,576 x16
16M-BIT [2M x 8 / 1M x 16] 3V SUPPLY FLASH MEMORY
|
Macronix International
|
| LH28F160S5H-L |
16M-bit (2MB x 8/1MB x 16) Smart 5 Flash Memories(16M(2Mx 8/1Mx 16) Smart5 技术闪速存储器)
|
Sharp Corporation
|
| KMM53216004BV |
16M x 32 DRAM SIMM(16M x 32 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM372C1600BK |
16M x 72 DRAM DIMM(16M x 72 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
